首页> 外国专利> SYSTEM FOR PRODUCING POLYCRYSTALLINE SILICON, APPARATUS FOR PRODUCING POLYCRYSTALLINE SILICON, AND METHOD FOR PRODUCING POLYCRYSTALLINE SILICON

SYSTEM FOR PRODUCING POLYCRYSTALLINE SILICON, APPARATUS FOR PRODUCING POLYCRYSTALLINE SILICON, AND METHOD FOR PRODUCING POLYCRYSTALLINE SILICON

机译:多晶硅的生产系统,多晶硅的生产设备和多晶硅的生产方法

摘要

PPROBLEM TO BE SOLVED: To provide a technology producing high purity polycrystalline silicon by effectively recovering heat from a coolant used for cooling a reaction furnace and by decreasing mixing of dopant impurities from an inner wall of the reaction furnace upon precipitating polycrystalline silicon in the reaction furnace. PSOLUTION: In a system for producing high purity polycrystalline silicon, hot water 15 having the temperature higher than the standard boiling point is used as a coolant to be supplied to a reaction furnace 10, so as to keep the inner wall temperature of a reactor at 370C or lower and the hot water 15 is evacuated by a pressure control unit provided in a coolant tank 20 to generate steam and a part of the steam is taken out so as to reuse as a heating source for another purpose. An alloy material of a composition having an R value of 40% or more, which is defined by R=[Cr]+[Ni]-1.5[Si], is used as a material for a corrosion-resistant layer 11a provided in the inner side of the inner wall of the reaction furnace 10. PCOPYRIGHT: (C)2011,JPO&INPIT
机译:

要解决的问题:提供一种通过高效率地从用于冷却反应炉的冷却剂中回收热量并通过减少在多晶硅中析出多晶硅时杂质从反应炉内壁的混合来生产高纯度多晶硅的技术。反应炉。

解决方案:在用于生产高纯度多晶硅的系统中,将温度高于标准沸点的热水15用作冷却剂,以供应至反应炉10,以保持反应釜10的内壁温度。在370℃或更低温度下的反应堆中,热水15由设置在冷却剂箱20中的压力控制单元排空以产生蒸汽,并取出一部分蒸汽以​​用作另一目的的加热源。由R = [Cr] + [Ni] -1.5 [Si]定义的R值为40%以上的组成的合金材料被用作用于设置在该材料中的耐腐蚀层11a的材料。反应炉内壁10的内侧。

COPYRIGHT:(C)2011,JPO&INPIT

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