METHOD FOR ANALYSIS OF ULTRATRACE IMPURITY METAL ON SILICON WAFER SURFACE

摘要

PROBLEM TO BE SOLVED: To provide a method for analysis, especially, automatic analysis of ultratrace impurity metal on a silicon wafer surface.;SOLUTION: The method for analysis includes: performing removal or inactivation processing on various products (by-products) produced on a decomposition (or etching) surface as a first process and making the surface hydrophobic rapidly with an HF gas thereafter at need; and thereby scanning the hydrophobic silicon wafer surface with drops of water with extremely high reproducibility and efficiency to collect and analyze decomposed matter on the surface.;COPYRIGHT: (C)2011,JPO&INPIT