The alumimium nitride powder, the alumimium nitride quality ceramic sintering body, the component for the semiconductor production device, the production mannered null alumimium nitride of the alumimium nitride luminescent material,

摘要

PROBLEM TO BE SOLVED: To improve a volume resistivity under a high-temperature atmosphere without adding an alkaline earth elements or boron.;SOLUTION: Aluminum nitride powder is prepared, for example, by placing 100 g of aluminum nitride (AlN) powder and 2.0 g of aluminum oxide (Al₂O₃) powder in a graphite crucible 1 and graphite crucibles 2a, 2b shown by figure 1 and thereafter, treating the entire crucible 3 shown by figure 1 with heat while keeping under a nitrogen atmosphere at a temperature of 2,200°C and a pressure of 1.5 kgf/cm² for 2 hours.;COPYRIGHT: (C)2007,JPO&INPIT