首页> 外国专利> DIRECT-MODULATION SEMICONDUCTOR LASER

DIRECT-MODULATION SEMICONDUCTOR LASER

机译:直接调制半导体激光器

摘要

PROBLEM TO BE SOLVED: To provide a direct-modulation semiconductor laser capable of obtaining a favorable eye opening.;SOLUTION: In the direct-modulation semiconductor laser for outputting a signal light of a transmission rate X1, a p-side electrode and an n-side electrode are formed not to be grounded, an electric NRZ signal of the transmission rate X1 is applied to the p-side electrode, an electric sinusoidal signal of a frequency X2 using a one-bit time width of the transmission rate X1 as one cycle is applied to the n-side electrode, and a minimum point of the electric sinusoidal signal applied to the n-side electrode is set to be situated at the center of the time width of each bit of the electric NRZ signal applied to the p-side electrode.;COPYRIGHT: (C)2011,JPO&INPIT
机译:解决的问题:提供一种能够获得良好的眼图张开度的直接调制半导体激光器。解决方案:在输出透射率X1的信号光的直接调制半导体激光器中,p侧电极和n侧电极形成为不接地,传输速率为X1的NRZ电信号施加到p侧电极,频率为X2的正弦电信号以传输速率X1的一位时间宽度为一将周期施加到n侧电极,并将施加到n侧电极的正弦电信号的最小值设置为位于施加到p的NRZ电信号的每个位的时间宽度的中心侧电极。;版权所有(C)2011,JPO&INPIT

著录项

  • 公开/公告号JP2010278396A

    专利类型

  • 公开/公告日2010-12-09

    原文格式PDF

  • 申请/专利权人 NIPPON TELEGR & TELEPH CORP NTT;

    申请/专利号JP20090132267

  • 发明设计人 ITO TOSHIO;KANAZAWA SHIGERU;

    申请日2009-06-01

  • 分类号H01S5/062;

  • 国家 JP

  • 入库时间 2022-08-21 18:20:18

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号