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Method and apparatus for processing a wafer surface by using a thin high velocity fluid layer
Method and apparatus for processing a wafer surface by using a thin high velocity fluid layer
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机译:通过使用薄的高速流体层处理晶片表面的方法和设备
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摘要
PROBLEM TO BE SOLVED: To provide an apparatus and method for reducing contamination capable of achieving lower costs, and more sufficiently supplying and removing fluid to and from a wafer surface.;SOLUTION: Processing fluid is supplied to the wafer surface and almost instantly removed with fluid on a wafer by a vacuum provided by an outlet 304. The processing fluid is supplied to the wafer surface such that the processing fluid is present in an area between a proximity head and the wafer surface for a moment with the given fluid on the wafer surface. In this processing, a meniscus 116 is formed and the boundary of the meniscus 116 acts as an IPA/processing fluid interface 118. Therefore, the meniscus 116 is supplied to the surface and practically acts as a fixed flow removed with the given fluid on the wafer surface. The fluid is almost instantly removed from the wafer surface area during drying, so that the formation of droplets of the fluid is prevented in the wafer surface area during drying and the probability of contamination on a wafer 108 is reduced.;COPYRIGHT: (C)2006,JPO&NCIPI
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