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Method and apparatus for processing a wafer surface by using a thin high velocity fluid layer

机译:通过使用薄的高速流体层处理晶片表面的方法和设备

摘要

PROBLEM TO BE SOLVED: To provide an apparatus and method for reducing contamination capable of achieving lower costs, and more sufficiently supplying and removing fluid to and from a wafer surface.;SOLUTION: Processing fluid is supplied to the wafer surface and almost instantly removed with fluid on a wafer by a vacuum provided by an outlet 304. The processing fluid is supplied to the wafer surface such that the processing fluid is present in an area between a proximity head and the wafer surface for a moment with the given fluid on the wafer surface. In this processing, a meniscus 116 is formed and the boundary of the meniscus 116 acts as an IPA/processing fluid interface 118. Therefore, the meniscus 116 is supplied to the surface and practically acts as a fixed flow removed with the given fluid on the wafer surface. The fluid is almost instantly removed from the wafer surface area during drying, so that the formation of droplets of the fluid is prevented in the wafer surface area during drying and the probability of contamination on a wafer 108 is reduced.;COPYRIGHT: (C)2006,JPO&NCIPI
机译:解决的问题:提供一种减少污染的设备和方法,能够实现较低的成本,并能更充分地向晶片表面进出流体。通过出口304提供的真空,在晶片上形成流体。处理流体被供应到晶片表面,使得在给定流体在晶片上的情况下,处理流体存在于邻近头和晶片表面之间的区域中片刻。表面。在该处理中,形成弯月面116,并且弯月面116的边界用作IPA /处理流体界面118。因此,弯月面116被供应至表面,并且实际上用作固定流,其中去除了给定流体。晶圆表面。在干燥过程中,流体几乎立即从晶片表面积中去除,从而防止了在干燥过程中在晶片表面积中形成液滴,并降低了晶片108上污染的可能性。版权所有:(C) 2006年,日本特许厅

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