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Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer

机译:使用薄的高速流体层处理晶片表面的方法和设备

摘要

Among the many embodiment, in one embodiment, a method for processing a substrate is disclosed which includes generating a fluid layer on a surface of the substrate, the fluid layer defining a fluid meniscus. The generating includes moving a head in proximity to the surface, applying a fluid from the head to the surface while the head is in proximity to the surface of the substrate to define the fluid layer, and removing the fluid from the surface through the proximity head by a vacuum. The fluid travels along the fluid layer between the head and the substrate at a velocity that increases as the head is in closer proximity to the surface.
机译:在多个实施例中,在一个实施例中,公开了一种用于处理基板的方法,该方法包括在基板的表面上产生流体层,该流体层限定了流体弯月面。产生包括:移动头部靠近表面,当头部靠近基板表面时将流体从头部施加到表面以限定流体层,以及通过邻近头部从表面去除流体。通过真空。流体沿着喷头与基板之间的流体层行进,其速度随着喷头更加靠近表面而增加。

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