A method of forming an anti-fuse memory cells, a plurality of such memory cells, to sense the programmed and

摘要

Will be described how to produce a programmable memory cell of a one-time multi-stage dielectric antifuse and two or more steering element such as a diode in series, to detect and to program. There are a case having different thicknesses, and if the dielectric constant of the dielectric material is different, and a case where both the dielectric constants and different thicknesses antifuse. In selecting programming pulse antifuse, the maximum voltage drop occurs in the antifuse only one to program the cell to allow the leakage current to some extent antifuse other. Voltage drop surrendered antifuse maximum, anti-fuse the other to keep the original state in some embodiments. By allowing the individual breakdown antifuse Thus, it is possible to achieve a unique data more than two states in a memory having anti-fuse two or more.