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The indium phosphide nano wire of the indium phosphide nano wire and its production

机译:磷化铟纳米线的磷化铟纳米线及其制造

摘要

PROBLEM TO BE SOLVED: To provide indium phosphide nanowires each covered with a chemically inert carbon film, which are useful as a material for a high-speed electronic device or an optical device, and a method for producing the same.;SOLUTION: Indium phosphide nanowires are synthesized by heating a mixture 4 of an indium phosphide powder and an indium powder at 950-1,050°C for 0.5-0.8 h in an inert gas stream. Thereafter, each indium phosphide nanowire is covered with the carbon film by depositing the carbon film on the surface of each indium phosphide nanowire by subsequently heating the indium phosphide nanowires at 950-1,050°C for 10-30 min while making an inert gas and methane gas flow. The carbon film can prevent the deterioration of the properties of the indium phosphide nanowires by preventing the oxidation of them since it is chemically stable.;COPYRIGHT: (C)2006,JPO&NCIPI
机译:要解决的问题:提供每一个被化学惰性碳膜覆盖的磷化铟纳米线,它们可用作高速电子设备或光学设备的材料及其制造方法;解决方案:磷化铟通过在惰性气流中在950-1,050℃下将磷化铟粉末和铟粉末的混合物4加热0.5-0.8h来合成纳米线。此后,通过随后在950-1,050℃下加热磷化铟纳米线10至30分钟,同时使之惰性,并在惰性气体和惰性气体中加热,通过在每条磷化铟纳米线的表面上沉积碳膜,将碳膜沉积在每条磷化铟纳米线上。甲烷气流。碳膜由于化学性质稳定,可以通过防止其氧化来防止磷化铟纳米线的性能下降。; COPYRIGHT:(C)2006,JPO&NCIPI

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