Implication the process which introduces

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing an electronic device such as VLSI/ULSI which can display a high effective gettering ability for heavy metals to improve the nondefective ratio. SOLUTION: The method of manufacturing an electronic device comprises steps of forming an Si3N4 film 2 as a mask having opened laser irradiation regions, and introducing lattice defects 8 for gettering metal impurities in the laser irradiation regions by irradiating it using an excimer laser 4.