Semiconductor light-emitting device, a surface emitting semiconductor lasers, surface emitting semiconductor laser array, an optical transmitter module, an optical transceiver module and an optical communication system

摘要

PROBLEM TO BE SOLVED: To lower the threshold by preventing an increase in a threshold current in a semiconductor light emitting element employing a quantum well active layer, and a barrier layer containing nitrogen (N) and other group V element simultaneously just like the quantum well active layer.;SOLUTION: In the semiconductor light emitting element having a quantum well active layer 9 containing nitrogen and other group V element simultaneously, and an active layer 5 consisting of underlying and overlying barrier layers 10a and 10c; the barrier layers 10a and 10c contain nitrogen and other group V element simultaneously just like the quantum well active layer 9. Since only the N composition of the underlying barrier layer 10a having significant effect on the crystallinity of the quantum well active layer 9 is decreased and the N composition of the overlying barrier layer 10c having insignificant effect is increased relatively, adverse effect of the underlying layer is reduced during the growth of the quantum well active layer 9 while sustaining the effect of adding nitrogen (N) to the barrier layers 10a and 10c. N composition of the quantum well active layer 9 can be reduced as compared with a case where both overlying and underlying layers have a small N composition and operation with an extremely low threshold can be realized.;COPYRIGHT: (C)2006,JPO&NCIPI