III family nitride crystal, the grain growth method and grain growth device

摘要

III family element and nitrogen and from the molten liquid 50 which includes with the alkaline metal or the alkaline earths metal at least with compressed atmosphere of the nitrogen content gas 2 axes where direction differs mutually, for example X axis, it shakes the molten liquid retention container 160 which keeps the aforementioned molten liquid 50 it grows III family nitride crystal at the time of, around the Y-axis. Because of this, the churning which it flows with sufficient flux the container base (or seed crystal) with the boundary over molten liquid 50 extensively becomes possible, inside crystallizing it becomes possible to grow the crystal whose macro defect is little. In addition, it becomes possible to make the flow of uniform molten liquid 50, over liquid retention container 160 the whole molten as macro defect can be decreased with this, unevenness of crystal thickness becomes small, growing the crystal which is superior in uniformity inside the surface with possible.