The selection manner of the parameter which renders the high impurity concentration distribution with ion implantation and in

摘要

PROBLEM TO BE SOLVED: To provide a method and program by which a parameter for simulation of an impurity concentration distribution produced by ion implantation can be extracted highly accurately.;SOLUTION: In the method of extracting the parameter for simulation of the impurity concentration distribution produced by ion implantation based on measurement data of the impurity concentration distribution, a partial region of the measurement data in which the concentration variation of the impurity concentration distribution is small is extracted as data (10A) to be matched and the integrated value of the concentration of the data (10A) to be matched in the depth direction is normalized to a prescribed value. Then the theoretical impurity concentration distribution value pattern-matched to the normalized data (10C) to be matched among the theoretical impurity concentration distribution values (20) specified by the parameter is detected, and the parameter corresponding to the detected theoretical impurity concentration distribution value is extracted. Since the data (10A) to be matched are normalized, the extracting accuracy of the parameter can be improved.;COPYRIGHT: (C)2005,JPO&NCIPI