首页> 外国专利> Forecasting manner of high impurity concentration distribution and the program null which decides high impurity concentration distribution

Forecasting manner of high impurity concentration distribution and the program null which decides high impurity concentration distribution

机译:高杂质浓度分布的预测方式和决定高杂质浓度分布的程序为null

摘要

Topic It can appraise the extent to cross direction of the impurity at the time of ion implantation, estimate method of the high impurity concentration distribution whose at the same time constraints are few is offered.Solutions With the baseplate it can give the direction which is vertical to the surface with 1st exponent for 1st appraisal where and the baseplate the direction which is given with 1st exponent is inclined from normal direction of the surface for 2nd appraisal to which it prepares. In the baseplate for 1st appraisal, ion implantation is done from vertical direction. Ion implantation is done making use of the ion beam which is parallel with the direction which is given to the baseplate for 2nd appraisal, with 1st exponent. The baseplate for 1st appraisal and concerning the baseplate for 2nd appraisal, the high impurity concentration distribution regarding depth direction is measured. It estimates with the 1st high impurity concentration distribution on the extended line of the ion beam on the basis of with the high impurity concentration distribution of the baseplate was measured for 1st appraisal which and the high impurity concentration distribution of the baseplate for 2nd appraisal, and the 2nd high impurity concentration distribution regarding the direction which crosses in the said extended line. Selective figure Figure 3
机译:<主题>可以评估离子注入时杂质的交叉方向程度,提供了同时具有很少约束的高杂质浓度分布的估算方法。解决方案使用底板可以给出方向。垂直于具有第一指数的表面进行第一评估,其中,底板的第一指数给出的方向从其准备的第二评估表面的法线方向倾斜。在第一评估基板中,从垂直方向进行离子注入。离子注入是通过与第二次评估给予基板的方向平行的离子束完成的,并且具有第一指数。对于第一评价用基板,对于第二评价用基板,测定深度方向上的高杂质浓度分布。根据第一评估中测量的基板高杂质浓度分布,以第一高杂质浓度分布在离子束的延长线上进行估算,第二评估中测量的基板高杂质浓度分布为评估值,关于在所述延长线上交叉的方向的第二高杂质浓度分布。<选择图>图3

著录项

  • 公开/公告号JP4866850B2

    专利类型

  • 公开/公告日2012-02-01

    原文格式PDF

  • 申请/专利权人 富士通株式会社;

    申请/专利号JP20070523294

  • 发明设计人 鈴木 邦広;

    申请日2005-06-30

  • 分类号H01L21/265;H01L21/00;

  • 国家 JP

  • 入库时间 2022-08-21 17:36:07

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号