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Storage medium structure organic electronic device, method of manufacturing an organic electronic device, manufacturing equipment of the organic electronic device, substrate processing system, the protective film, and the control program is stored

机译:存储介质结构的有机电子装置,有机电子装置的制造方法,有机电子装置的制造设备,基板处理系统,保护膜和控制程序

摘要

To protect the organic element by protective film that does not change the characteristics of the organic element and has a high sealing force while easing the [challenge] stress. SOLUTION: A substrate processing system Sys, the substrate processing apparatus 10 including the microwave plasma processing apparatus PM4 and second PM3 microwave plasma processing apparatus PM1 evaporation apparatus, the first is placed in a cluster structure, carrying the substrate G fabricating an organic electronic device while keeping the vacuum of space desired substrate G is moved to the unloading. ACHx film 54 to form an organic EL device by depositing device PM1, converted to plasma butyne by the power of the microwave in a microwave plasma processing apparatus PM3 first, so as to cover the organic EL element adjacent to the organic EL device to form a to form a SiNx film 55 on the film 54 aCHx to the nitrogen plasma gas and silane gas by the power of the microwave in a microwave plasma processing apparatus PM4 second. [Selection] Figure Figure 1
机译:通过保护膜来保护有机元素,该保护膜不会改变有机元素的特性,并具有较高的密封力,同时缓解了挑战应力。 SOLUTION:基板处理系统Sys,基板处理装置10包括微波等离子体处理装置PM4和第二PM3微波等离子体处理装置PM1蒸发装置,第一个放置为群集结构,承载基板G制造有机电子器件,同时保持所需空间的真空,将期望的基板G移至卸载位置。 ACHx膜54通过沉积装置PM1形成有机EL装置,首先在微波等离子体处理装置PM3中通过微波的能量转化成等离子体丁炔,从而覆盖与有机EL装置相邻的有机EL元件以形成接着,在微波等离子处理装置PM4中,利用微波的动力在膜54aCHx上形成与氮等离子体气体和硅烷气体成膜的SiNx膜55。 [选择]图图1

著录项

  • 公开/公告号JPWO2009028485A1

    专利类型

  • 公开/公告日2010-12-02

    原文格式PDF

  • 申请/专利权人 東京エレクトロン株式会社;

    申请/专利号JP20090530120

  • 发明设计人 石川 拓;

    申请日2008-08-26

  • 分类号H05B33/04;H01L51/50;H05B33/10;C23C16/42;C23C16/56;

  • 国家 JP

  • 入库时间 2022-08-21 18:16:44

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