Ultra-Low Energy RRAM with Good Endurance and Retention

摘要

This invention proposes an ultra-low energy (ULE) RRAM with electrode_—1/covalent-bond-dielectric/metal-oxide/electrode_—2/substrate structure, where the sequence of covalent-bond-dielectric layer and metal-oxide layer is exchangeable. Stacked dielectric layers of covalent-bond-dielectric and metal-oxide are used to improve the switching power and energy, retention and cycling endurance of resistance random access memory.