首页> 外国专利> DIODE LASER, INTEGRAL DIODE LASER, AND AN INTEGRAL SEMICONDUCTOR OPTICAL AMPLIFIER

DIODE LASER, INTEGRAL DIODE LASER, AND AN INTEGRAL SEMICONDUCTOR OPTICAL AMPLIFIER

机译:二极管激光器,集成二极管激光器和集成半导体光学放大器

摘要

Invention relates to three types of laser light sources: diode laser, integral diode laser (in form of integrally connected diode lasers) and integral semiconductor optical amplifier (in form of integrally connected driving laser diode and semiconductor amplifier element), which amplifier consists of original optical resonator of diode laser and original laser radiation coupling. Two reflectors in optical resonator of diode laser, which falls into three types of above-mentioned laser radiation sources, have greatest possible reflection factor on both sides thereof and radiation coupling from active layer is carried out, by-passing active layer, through broadband semiconductor layers of the modified heterostructure of diode laser with practically fully antireflective (less than 0.01%) optical face. Invention makes it possible to design superpower, high-performance, high-speed and reliable three types of sources of single-frequency, single-mode and multi-mode high quality laser radiation in broad wavelength band, to simplify the production and cut in production costs thereof.
机译:本发明涉及三种类型的激光光源:二极管激光器,整体二极管激光器(以整体连接的二极管激光器的形式)和整体半导体光放大器(以整体连接的驱动激光二极管和半导体放大器元件的形式),该放大器由原件组成。二极管激光器的光学谐振器与原始激光辐射耦合。二极管激光器的光谐振器中的两个反射器属于上述三种类型的激光辐射源,在其两侧均具有最大可能的反射系数,并且通过有源层,通过有源层,通过宽带半导体实现了有源层的辐射耦合具有几乎完全抗反射(小于0.01%)光学面的二极管激光器的改进异质结构层。本发明使得可以设计宽频带的超功率,高性能,高速和可靠的三种类型的单频,单模和多模高质量激光辐射源,以简化生产并减少生产。其成本。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号