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DIODE LASER, INTEGRAL DIODE LASER AND AN INTEGRAL SEMICONDUCTOR OPTICAL AMPLIFIER

机译:二极管激光器,集成二极管激光器和集成半导体光学放大器

摘要

a diode laser, integral.diode laser (in the form of integrally connected diode lasers) and an integral semiconductor optical amplifier (in the form of Integrally connected driving laser diode and semiconductor amplifier element), which amplifier consists of the original optical resonator of a diode laser and an original laser radiation coupling. Two reflectors in the optical resonator of the diode laser, which falls into the three types of the above-mentioned laser radiation sources, have the greatest possible reflection factor on both sides thereof and the radiation coupling from an active layer is carried out, by-passing the active layer, through broadband semiconductor layers of the inventive modified heterostructure of the diode laser with a practically fully antireflecflve ((ess than 0.01%) optical face. The invention makes it possible to design superpower, high-performance, high-speed and reliable three types of sources of single-frequency, single-mode and multi-mode high quality laser radiation in a bofad wavelength band, to simplify the production and cut in the production cost thereof.
机译:二极管激光器,整体二极管激光器(以整体连接的二极管激光器的形式)和整体半导体光放大器(以整体连接的驱动激光二极管和半导体放大器元件的形式),该放大器由半导体激光器的原始光学谐振器组成二极管激光器和原始的激光辐射耦合。属于上述三种类型的激光辐射源的二极管激光器的光谐振器中的两个反射器在其两侧都具有最大可能的反射系数,并且通过以下方式实现了与有源层的辐射耦合:穿过有源层,穿过具有几乎完全抗反射((小于0.01%)光学面)的二极管激光器的本发明改良异质结构的宽带半导体层。本发明使得设计超功率,高性能,高速和高效率成为可能。在bofad波长带中提供可靠的三种类型的单频,单模和多模高质量激光辐射源,以简化生产并降低生产成本。

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