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METHOD FOR PRODUCING ZINC OXIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE AND ZINC OXIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE
METHOD FOR PRODUCING ZINC OXIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE AND ZINC OXIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE
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机译:生产基于氧化锌的半导体发光器件和基于氧化锌的半导体发光器件的方法
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摘要
The ohmic contact between a growth substrate and an electrode formed thereon is improved in a zinc oxide-based semiconductor light-emitting device, thereby improving the light-emission efficiency and reliability A step for forming an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer in sequence on a first principal face of a substrate having a composition of MgxZn1-xO (0≦x≦0.68); a step for forming microcracks in a second principal face of the substrate so as to extend toward an interior of the substrate; a step for carrying out a heat treatment at a temperature of 100° C. or higher; and a step for forming an electrode by depositing a metal material composed of one among Al, a Ga alloy, and an In alloy on the second principal face of the substrate, and forming an electrode in a heat treatment at a temperature of 300° C. to 1000° C. are provided.
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机译:在基于氧化锌的半导体发光器件中,改善了生长衬底和在其上形成的电极之间的欧姆接触,从而提高了发光效率和可靠性。形成n型半导体层的步骤,发光在具有Mg x Sub> Zn 1-x Sub> O(0≤x≤0.68)组成的衬底的第一主面上依次形成p-型半导体层和p型半导体层);在基板的第二主面上形成微裂纹以便向基板的内部延伸的步骤。在100℃以上的温度下进行热处理的步骤;以及通过在基板的第二主面上沉积由Al,Ga合金和In合金中的一种构成的金属材料而形成电极并在300℃的温度下进行热处理而形成电极的步骤提供了1000至1000℃。
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