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Electrode for silicon carbide, silicon carbide semiconductor element, silicon carbide semiconductor device and method for forming electrode for silicon carbide
Electrode for silicon carbide, silicon carbide semiconductor element, silicon carbide semiconductor device and method for forming electrode for silicon carbide
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机译:碳化硅电极,碳化硅半导体元件,碳化硅半导体器件以及形成碳化硅电极的方法
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摘要
An electrode for silicon carbide includes a silicide region which is provided in contact with a surface of a silicon carbide (SiC) layer and a carbide region which is provided on the silicide region. The silicide region contains a silicide of a first metal in more amount than a carbide of a second metal whose free energy of carbide formation is less than that of silicon (Si). The carbide region contains the carbide of the second metal in more amount than the silicide of the first metal.
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