SILICON CARBIDE ELECTRODE, SILICON CARBIDE SEMICONDUCTOR ELEMENT, SILICON CARBIDE SEMICONDUCTOR DEVICE, AND METHOD FOR FORMING ELECTRODE FOR SILICON CARBIDE

摘要

It is possible to strengthen the adhesiveness with a silicon carbide layer by inhibiting the generation of carbon clusters which attenuate the adhesiveness with a silicon carbide layer, and it is possible to reduce the conduction resistance of an electrode by preventing the nitrogen contained in the silicon carbide from being sucked in. Disclosed is a silicon carbide electrode (1) which is provided with: a silicide region (3) which is disposed on the surface of a silicon carbide layer (2) and which contains a greater amount of a silicide of a first metal than a carbide of a second metal having a carbide formation free energy that is smaller than silicon; and a carbide region (4) which is disposed on the silicide region and which contains a greater amount of the carbide of a second metal than the silicide of a first metal.