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Substrate for growing single crystal diamond layer and method for producing single crystal diamond substrate
Substrate for growing single crystal diamond layer and method for producing single crystal diamond substrate
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机译:用于生长单晶金刚石层的衬底和用于生产单晶金刚石衬底的方法
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摘要
The present invention is a substrate for growing a single crystal diamond layer including: at least, a base material made of a single crystal diamond, and an iridium film or a rhodium film heteroepitaxially grown on a side of the base material where the single crystal diamond layer is to be grown; wherein a peripheral end portion of a surface of the base material on the side where the single crystal diamond layer is to be grown is chamfered with a curvature radius (r), the curvature radius satisfying (r)≧50 μm. As a result, there is provided a substrate for growing a single crystal diamond layer and a method for producing a single crystal diamond substrate, the substrate and the method in which a single crystal diamond having uniform and high crystallinity can be reproducibly produced at low cost.
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