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GRAPHENE/(MULTILAYER) BORON NITRIDE HETEROEPITAXY FOR ELECTRONIC DEVICE APPLICATIONS

机译：用于电子设备的石墨烯/（多层）氮化硼异质外延

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摘要

Disclosed is a substrate-mediated assembly for graphene structures. According to an embodiment, long-range ordered, multilayer BN(111) films can be formed by atomic layer deposition (ALD) onto a substrate. The subject BN(111) films can then be used to order carbon atoms into a graphene sheet during a carbon deposition process.

机译：公开了用于石墨烯结构的衬底介导的组件。根据一个实施方案，可以通过原子层沉积（ALD）在基板上形成长程有序的多层BN（ 111 ）膜。然后，可以使用主题BN（ 111 ）膜在碳沉积过程中将碳原子排序到石墨烯片中。 展开▼

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公开/公告号US2011045282A1

专利类型

公开/公告日2011-02-24

原文格式PDF

申请/专利权人 JEFFRY KELBER;
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申请/专利号US20090543053

发明设计人 JEFFRY KELBER;
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申请日2009-08-18

分类号B32B9;B05D5/12;C23C14/34;B32B15/04;

国家 US

入库时间 2022-08-21 18:13:22

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