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INTEGRATED CIRCUIT PACKAGES INCLUDING HIGH DENSITY BUMP-LESS BUILD UP LAYERS AND A LESSER DENSITY CORE OR CORELESS SUBSTRATE
INTEGRATED CIRCUIT PACKAGES INCLUDING HIGH DENSITY BUMP-LESS BUILD UP LAYERS AND A LESSER DENSITY CORE OR CORELESS SUBSTRATE
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机译:集成电路套件,包括高密度无堆积层和无密度芯或无衬层基板
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摘要
In some embodiments, integrated circuit packages including high density bump-less build up layers and a lesser density core or coreless substrate are presented. In this regard, an apparatus is introduced having a first element including a microelectronic die having an active surface and at least one side, an encapsulation material adjacent said at least one microelectronic die side, wherein said encapsulation material includes at least one surface substantially planar to said microelectronic die active surface, a first dielectric material layer disposed on at least a portion of said microelectronic die active surface and said encapsulation material surface, a plurality of build-up layers disposed on said first dielectric material layer, and a plurality of conductive traces disposed on said first dielectric material layer and said build-up layers and in electrical contact with said microelectronic die active surface; and a second element coupled to the first element, the second element including a substrate having a plurality of dielectric material layers and conductive traces to conductively couple conductive contacts on a top surface with conductive contacts on a bottom surface, said conductive contacts on said top surface conductively coupled with said conductive traces of said first element. Other embodiments are also disclosed and claimed.
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