APPLICATION METHOD OF SILICON POWDER AND RAW MATERIAL SILICON BRICK WITH GOOD FILLING PROPERTY IN MONO-CRYSTAL FURNACE OR MULTI-CRYSTAL FURNACE (amended)

摘要

An application method of silicon powder and raw material silicon brick with good filling property in a mono-crystal or a multi-crystal furnace involves pressing silicon powder having a particle size of 0.1 to 100 micrometers into silicon brick having weighing 0.2 to 2,000,000 grams by cold or hot isostatic pressing, then charging it into a mono-crystal or multi-crystal furnace. The pressure range of cold isostatic pressing is 10 MPa to 800 MPa. The pressure range of hot isostatic pressing is 10 Mpa to 800 Mpa. The temperature range for the method is 30° C. to 1,400° C.; The raw material silicon brick is used as the original raw material of silicon crystal growth in the production of solar cells or semiconductor.