首页> 外国专利> DEVICE AND METHOD OF SUPPLYING POWER TO AN ELECTRON SOURCE, AND ION-BOMBARDMENT-INDUCED SECONDARY-EMISSION ELECTRON SOURCE

DEVICE AND METHOD OF SUPPLYING POWER TO AN ELECTRON SOURCE, AND ION-BOMBARDMENT-INDUCED SECONDARY-EMISSION ELECTRON SOURCE

机译：向电子源供电以及离子轰击诱发的二次发射电子源的装置和方法

页面导航

摘要
著录项
相似文献

摘要

The power supply device (14) for an ion-bombardment-induced secondary-emission electron source in a low-pressure chamber comprises a control input, two high-voltage outputs, a means for generating a plurality of positive pulses on a high-voltage output, and a means for generating a negative pulse on the other high-voltage output after at least some of the positive pulses.

机译：用于低压室中离子轰击诱发的二次发射电子源的电源设备（ 14 ）包括一个控制输入，两个高压输出，一个用于生成多个高压输出上的正脉冲，以及在至少一些正脉冲之后在另一个高压输出上产生负脉冲的装置。 展开▼

著录项

公开/公告号US2011057565A1

专利类型

公开/公告日2011-03-10

原文格式PDF

申请/专利权人 MAXIME MAKAROV;
展开▼

申请/专利号US20090812245

发明设计人 MAXIME MAKAROV;
展开▼

申请日2009-01-08

分类号H01J3/00;

国家 US

入库时间 2022-08-21 18:10:50

相似文献

专利

外文文献

中文文献

1. 向电子源供电的设备和方法以及离子轰击致二次发射电子源 [P] . 中国专利： CN101952927B . 2012.10.17

2. 向电子源供电的设备和方法以及离子轰击致二次发射电子源 [P] . 中国专利： CN101952927A . 2011-01-19

3. Device and method of supplying power to an electron source, and ion-bombardment-induced secondary-emission electron source [P] . 美国专利： US8664863B2 . 2014-03-04

机译：向电子源供电的装置和方法，以及离子轰击诱发的二次发射电子源

4. DEVICE AND METHOD OF SUPPLYING POWER TO AN ELECTRON SOURCE, AND ION-BOMBARDMENT-INDUCED SECONDARY-EMISSION ELECTRON SOURCE [P] . 韩国专利： KR20100134558A . 2010-12-23

机译：向电子源供电以及离子轰击诱发的二次发射电子源的装置和方法

5. DEVICE AND METHOD OF SUPPLYING POWER TO AN ELECTRON SOURCE, AND ION-BOMBARDMENT-INDUCED SECONDARY-EMISSION ELECTRON SOURCE [P] . 世界知识产权组织专利： WO2009112668A1 . 2009-09-17

机译：向电子源供电以及离子轰击诱发的二次发射电子源的装置和方法

1. Preliminary analysis of back-streaming electrons on the source plasma region of ion sources for the EAST-NBI [J] . Chundong HU, Minashan WU, Yahong XIE, 等离子体科学和技术（英文版） . 2017,第004期

2. Generation and Control of a Powerful Electron-Beam Current in an Accelerator Based on a Secondary-Emission Source and Its Application [J] . N. I. Aizatsky, A. N. Dovbnya, V. V. Zakutin, Physics of particles and nuclei letters . 2014,第5期

3. Organic Bioelectronics: From Functional Materials to Next-Generation Devices and Power Sources [J] . Ohayon David, Inal Sahika Advanced Materials . 2020,第36期

4. New Method of Thermal Energy—To Electrical Energy Conversion in Vacuum Devices with the Metal—Dielectric Nanofilm Electron Sources [J] . V. E. Ptitsin Materials Sciences and Applications . 2018,第13期

5. Renewed energy sources and power supplies of radio-electronic devices [C] . Smerdov, A., Bondarenko, . 2004

6. Microengineered sensor devices with field emission electron sources [D] . Sun, Chao 1997

7. Average stopping powers for electron and photon sources for radiobiological modeling and microdosimetric applications [O] . Oleg N Vassiliev, Stephen F Kry, David R Grosshans, -1

8. The electron accelerator for technological purposes with a secondary-emission electron source as the basis [O] . Dovbnya A.N., Zakutin V.V., Reshetnyak N.G., 2007

1. New Method of Thermal Energy—To Electrical Energy Conversion in Vacuum Devices with the Metal—Dielectric Nanofilm Electron Sources [J] . V. E. Ptitsin . 材料科学与应用期刊（英文） . 2018,第13期

2. Power Electronics of Hybrid Power Source [J] . Jan Leuchter ,Pavol Bauer . 通讯和计算机 . 2012,第010期

3. iTENG in Self-powered Implantable Medical Electronic Devices [J] . Zhou ,Li . 功能材料信息 . 2016,第002期

4. A small electron beam ion trap/source facility for electroneutral-ion collisional spectroscopy in astrophysical plasmas [J] . Gui-Yun Liang ,Xin-Wen Ma ,Gang Zhao . 天文和天体物理学研究 . 2018,第001期

5. 基于太赫兹源的场致发射电子源的研究 [C] . 狄云松 ,雷威 ,张晓兵 . 第一届全国太赫兹科学技术与应用学术交流会 . 2012

6. 二次电子发射系数测量装置研究 [A] . 吴群 . 2016