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Cross-contamination control for processing of circuits comprising MOS devices that include metal comprising high-K dielectrics
Cross-contamination control for processing of circuits comprising MOS devices that include metal comprising high-K dielectrics
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机译:交叉污染控制,用于处理包含MOS器件的电路,该MOS器件包含具有高K电介质的金属
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摘要
A cross method for fabricating a CMOS integrated circuit (IC) includes providing a semiconductor wafer having a topside semiconductor surface, a bevel semiconductor surface, and a backside semiconductor surface, wherein the bevel semiconductor surface and backside semiconductor surface include silicon or germanium. A metal including high-k gate dielectric layer is formed on at least the topside semiconductor surface and on at least a portion of the bevel semiconductor surface and backside semiconductor surface. The high-k dielectric material on the bevel semiconductor surface and the backside semiconductor surface are selectively removed while protecting the high-k dielectric layer on the topside semiconductor surface. The selective removing includes a first oxidizing treatment, and a fluoride including wet etch follows the first oxidizing treatment. The fabrication of the IC is completed including forming at least one metal gate layer on the high-k gate dielectric layer after the selectively removing step.
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