Apparatus and method for reducing noise in mixed-signal circuits and digital circuits

摘要

Apparatus and a method are provided for reducing noise in mixed-signal and digital circuits. One apparatus (200) includes a metal-oxide-semiconductor field-effect transistor (MOSFET) (210). MOSFET (210) includes a doped substrate (2210) with a source formed proximate a substrate tie (2224) and a substrate tie (2250) adjacent substrate (2210). A ground rail (255) is coupled to the source and substrate tie (2224), and a ground rail (285) is coupled to substrate tie (2250). Ground rails (255) and (285) are configured to be coupled to different ground networks (250 and 280). One method includes producing a model of a semiconductor device including a standard semiconductor cell (710). The semiconductor cell is identified as a noise-sensitive or a noise-producing semiconductor cell (720), and the semiconductor cell is replaced with a corresponding noise-aware semiconductor cell (730).