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Method of forming a metal silicide layer, devices incorporating metal silicide layers and design structures for the devices
Method of forming a metal silicide layer, devices incorporating metal silicide layers and design structures for the devices
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机译:形成金属硅化物层的方法,结合了金属硅化物层的器件以及该器件的设计结构
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摘要
Methods of forming metal silicide layers. The methods include: forming a silicon-rich layer between dielectric layers; contacting the silicon-rich layer with a metal layer and heating the silicon rich-layer and the metal layer to diffuse metal atoms from the metal layer into the silicon layer to form a metal silicide layer.
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