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Semiconductor device including a power device with first metal layer and second metal layer laterally spaced apart
Semiconductor device including a power device with first metal layer and second metal layer laterally spaced apart
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机译:包括功率器件的半导体器件,该功率器件具有横向间隔开的第一金属层和第二金属层
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摘要
A semiconductor device exhibits a first metal layer, made of a first metal, with at least one contiguous subsection. At least one second metal layer, made of a second metal, is placed on the contiguous subsection of the first metal layer. The second metal is harder than the first metal. The second metal layer is structured to form at least two layer regions, which are disposed on the contiguous subsection of the first metal layer. The second metal exhibits a boron-containing or phosphorus-containing metal or a boron-containing or phosphorus-containing metal alloy.
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