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Replacement spacers for MOSFET fringe capacitance reduction and processes of making same
Replacement spacers for MOSFET fringe capacitance reduction and processes of making same
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机译:用于减少MOSFET边缘电容的替换垫片及其制造工艺
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摘要
A process includes planarizing a microelectronic device that includes a gate stack and adjacent trench contacts. The process also includes removing a gate spacer at the gate stack and replacing the gate spacer with a dielectric that results in a lowered overlap capacitance between the gate stack and an adjacent embedded trench contact.
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