Process for inducing a two-way shape memory effect in a device formed of a shape memory alloy and a device made by the process

摘要

A process for inducing a two-way shape memory effect in a device forward of a shape memory alloy and a device made by the process are disclosed. The two-way memory effect occurs in the device in a temperature range of between about 5° C. to 25° C. wherein the training process is based on B2R phrase transformations. An R-phase formation or reorientation takes place in the device under stress whereupon the R-phase transforms into stress induced martenite. The device is subjected to thermocycling.