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Image sensor applied with device isolation technique for reducing dark signals and fabrication method thereof
Image sensor applied with device isolation technique for reducing dark signals and fabrication method thereof
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机译:应用了用于减少暗信号的器件隔离技术的图像传感器及其制造方法
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摘要
The present invention relates to an image sensor applied with a device isolation technique for reducing dark signals and a fabrication method thereof. The image sensor includes: a logic unit; and a light collection unit in which a plurality of photodiodes is formed, wherein the photodiodes are isolated from each other by a field ion-implantation region formed under a surface of a substrate and an insulation layer formed on the surface of the substrate.
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