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Magnetic devices having oxide antiferromagnetic layer next to free ferromagnetic layer
Magnetic devices having oxide antiferromagnetic layer next to free ferromagnetic layer
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机译:在自由铁磁层旁边具有氧化物反铁磁层的磁性器件
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摘要
Magnetic multilayer structures, such as magnetic or magnetoresistive tunnel junctions (MTJs) and spin valves, having a magnetic biasing layer formed next to and magnetically coupled to the free ferromagnetic layer to achieve a desired stability against fluctuations caused by, e.g., thermal fluctuations and astray fields. Stable MTJ cells with low aspect ratios can be fabricated using CMOS processing for, e.g., high-density MRAM memory devices and other devices, using the magnetic biasing layer. Such multilayer structures can be programmed using spin transfer induced switching by driving a write current perpendicular to the layers to switch the magnetization of the free ferromagnetic layer.
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