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Magnetic devices having oxide antiferromagnetic layer next to free ferromagnetic layer

机译:在自由铁磁层旁边具有氧化物反铁磁层的磁性器件

摘要

Magnetic multilayer structures, such as magnetic or magnetoresistive tunnel junctions (MTJs) and spin valves, having a magnetic biasing layer formed next to and magnetically coupled to the free ferromagnetic layer to achieve a desired stability against fluctuations caused by, e.g., thermal fluctuations and astray fields. Stable MTJ cells with low aspect ratios can be fabricated using CMOS processing for, e.g., high-density MRAM memory devices and other devices, using the magnetic biasing layer. Such multilayer structures can be programmed using spin transfer induced switching by driving a write current perpendicular to the layers to switch the magnetization of the free ferromagnetic layer.
机译:磁性多层结构,例如磁性或磁阻隧道结(MTJ)和自旋阀,具有在自由铁磁层旁边形成并磁耦合到自由铁磁层的磁偏置层,以实现所需的稳定性,以抵抗由例如热波动和误入歧途引起的波动领域。具有低纵横比的稳定MTJ单元可以使用磁性偏置层通过用于例如高密度MRAM存储器件和其他器件的CMOS处理来制造。通过驱动垂直于各层的写入电流以切换自由铁磁层的磁化,可以使用自旋转移感应开关来编程这种多层结构。

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