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Light-emitting-diode chip comprising a sequence of GAN-based epitaxial layers which emit radiation and a method for producing the same
Light-emitting-diode chip comprising a sequence of GAN-based epitaxial layers which emit radiation and a method for producing the same
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机译:包括一系列发射辐射的基于gan的外延层的发光二极管芯片及其制造方法
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摘要
A light-emitting diode chip (1) comprises a GaN-based, radiation-emitting epitaxial layer sequence (3), an active region (19), an n-doped layer (4) and a p-doped layer (5). The p-doped layer (5) is provided, on its main surface (9) facing away from the active region (19), with a reflective contact metallization (6) comprising a radioparent contact layer (15) and a reflective layer (16). Methods for fabricating LED chips of this type by thin-film technology are provided, as are LED components containing such LED chips.
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