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Semiconductor memory device using a bandgap reference circuit and a reference voltage generator for operating under a low power supply voltage
Semiconductor memory device using a bandgap reference circuit and a reference voltage generator for operating under a low power supply voltage
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机译:使用带隙基准电路和基准电压发生器以在低电源电压下工作的半导体存储器件
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摘要
A semiconductor memory device includes a boosting power supply circuit that boosts a first voltage to a second voltage, which is higher than an external power supply. A first bandgap reference (BGR) circuit operates on the second voltage generated by the boosting power supply circuit. Thereby, the power supply circuit generates a voltage by using a bandgap reference circuit.
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