A high supply voltage bandgap reference circuit using drain-extended MOS devices

摘要

References(9) A bandgap reference circuit that uses high-voltage drain-extended MOS (DeMOS) devices is presented for high supply voltage application without using a voltage regulator for the bandgap core circuit. The bandgap reference circuit was fabricated using commercially available 0.18µm high-voltage DeMOS technology. Measurement result of the chip shows that the reference voltage change rate for VDD variation from 5V to 30V and for the temperature variation from -40°C to +140°C were 1.16mV/V and 0.84mV/°C, respectively. The measured reference voltage with the supply voltage of 15V at room temperature was 2.487V. The current consumption and the active area were 3.2µA and 320×345µm2, respectively.