首页>
外国专利>
A METHOD FOR PERFORMING WRITE AND READ OPERATIONS IN A MATRIX ADDRESSED MEMORY, AND APPARATUS FOR PERFORMING THE SAME
A METHOD FOR PERFORMING WRITE AND READ OPERATIONS IN A MATRIX ADDRESSED MEMORY, AND APPARATUS FOR PERFORMING THE SAME
展开▼
机译:在矩阵寻址存储器中执行写入和读取操作的方法以及执行相同方法的设备
展开▼
页面导航
摘要
著录项
相似文献
摘要
This invention relates to a method for performing read and write operations in a passive matrix-addressed memory array of memory cells comprising an electrically polarizable material exhibiting polarization remanence, in particular an electret or ferroelectric material, wherein a logical value stored in a memory cell is represented by an actual polarization state in the memory cell, a degree of polarization in the polarizable material is limited during each read and write cycle to a value defmed by a circuit device controlling the read and write operations, with said value ranging from zero to an upper limit corresponding to saturation of the polarization and consistent with predetermined criteria for a reliable detection of a logic state of a memory cell. This invention also relates to an apparatus for performing write and read operations in a passive matrix-addressed memory array encompassed by the apparatus and comprising memory cells containing an electrically polarizable material exhibiting polarization remanence, in particularly a ferroelectric material, comprises circuitry which adjusts an application of voltages for addressing the memory cells in order to limit a degree of polarization change in the polarizable material during each read and write cycle to value defined by a circuit controlling said read and write operations.
展开▼