use of lacunarspinellen with tetrahedral aggregates of u00fcbergangselements of am4x8 - type in a writable nonvolatile memory several times for electronic data and corresponding material

摘要

Use of lacunary spinels to aggregates tetrahedral of transition element of the type am4x8 in a rewriteable non-volatile memory of the electronic data, and material correspondant.l' invention relates to the use of a material belonging to the family of the lacunary spinels to aggregates tetrahedral of transition element am4x8 as the active material of a non-volatile memory of the electronic data, in which: - a comprises at least one of the following elements: ga, ge, zn; - m comprises at least one of the following elements: v, nb, ta, mo; - x, comprises at least one of the following elements: s.