ADJUSTING THRESHOLD VOLTAGE FOR SOPHISTICATED TRANSISTORS BY DIFFUSING A GATE DIELECTRIC CAP LAYER MATERIAL PRIOR TO GATE DIELECTRIC STABILIZATION

摘要

Sophisticated gate electrode structures may be formed by providing a cap layer (121) including a desired species that may diffuse into the gate dielectric material (110) prior to performing a treatment for stabilizing the sensitive gate dielectric material (110). In this manner, complex high-k metal gate electrode structures may be formed on the basis of reduced temperatures and doses for a threshold adjusting species compared to conventional strategies. Moreover, a single metal-containing electrode material may be deposited for both types of transistors.