Resin bilayer mask for extreme ultraviolet photolithography and extreme ultraviolet photolithographic method

摘要

Masking layer for etching semiconductor substrates is characterized in that: (a) the pattern to be etched can be transferred to the masking layer by photolithography at extreme ultraviolet (EUV) wavelengths of 10-100 nm; and (b) the masking layer is resistant to plasma etching. An Independent claim is also included for a process for photolithographic etching of semiconductor integrated circuits comprising: (i) EUV irradiation of a first polymer resin layer that is resistant to deep ultraviolet (DUV) wavelengths of 100-300 nm and/or ultraviolet (UV) wavelengths of 300-700 nm; (ii) DUV irradiation of a second polymer resin layer that is resistant to EUV radiation and plasma etching; and (iii) etching of an underlying layer through the resulting mask.