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COMPOSITIONS FOR FORMING DOPED REGIONS IN SEMICONDUCTOR SUBSTRATES, METHODS FOR FABRICATING SUCH COMPOSITIONS, AND METHODS FOR FORMING DOPED REGIONS USING SUCH COMPOSITIONS
COMPOSITIONS FOR FORMING DOPED REGIONS IN SEMICONDUCTOR SUBSTRATES, METHODS FOR FABRICATING SUCH COMPOSITIONS, AND METHODS FOR FORMING DOPED REGIONS USING SUCH COMPOSITIONS
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机译:在半导体基底中形成掺杂区的组合物,制备这种组合物的方法以及使用这种组合物形成掺杂区的方法
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摘要
Compositions for forming doped regions in semiconductor substrates, methods for fabricating such compositions, and methods for forming doped regions using such compositions are provided. In one embodiment, a dopant-comprising composition comprises a conductivity-determining type impurity dopant, a silicate carrier, a solvent, and a moisture adsorption-minimizing component. In another embodiment, a dopant-comprising composition comprises a conductivity-determining type impurity dopant, a silicate carrier, a solvent, and a high boiling point material selected from the group consisting of glycol ethers, alcohols, and combinations thereof. The high boiling point material has a boiling point of at least about 150C.
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