首页> 外国专利> VAPOR DEPOSITION DEVICE AND A THIN FILM MANUFACTURING METHOD, CAPABLE OF THE IMPROVEMENT OF FILM FORMATION RATE BY TRANSFERRING A DEPOSITED MATERIAL WITH CARRIER GAS

VAPOR DEPOSITION DEVICE AND A THIN FILM MANUFACTURING METHOD, CAPABLE OF THE IMPROVEMENT OF FILM FORMATION RATE BY TRANSFERRING A DEPOSITED MATERIAL WITH CARRIER GAS

机译:气相沉积装置和薄膜制造方法,能够通过用载气转移沉积材料来改善成膜速率

摘要

PURPOSE: A vapor deposition device and a thin film manufacturing method, capable of the improvement of film formation rate by transferring a deposited material with carrier gas, is provided to reduce deposited material loss by installing a flat ejecting part with a plurality of ejecting holes in the direction facing to a substrate.;CONSTITUTION: A vapor deposition device comprises an inlet port, a heater part, a spreader and an injection part(140). The deposited material of solid phase is guided to the inlet port. The heater part heats the deposited material flowing in and changes solid phase into gas phase. The spreader diffuses the deposited material heated with the heater part. The injection part is located to be faced with a substrate.;COPYRIGHT KIPO 2011
机译:目的:提供一种气相沉积装置和薄膜制造方法,其能够通过将沉积的材料与载气一起转移来提高成膜速率,从而通过在其上安装具有多个喷射孔的扁平喷射部件来减少沉积材料的损失。组成:气相沉积装置,包括入口,加热器部分,扩散器和注入部分(140)。沉积的固相材料被引导至入口。加热器部分加热流入的沉积材料并将固相变成气相。散布器扩散被加热器部分加热的沉积材料。注入部分的位置要面对基材。; COPYRIGHT KIPO 2011

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