DIFFERENT SUBSTRATE FORMING NON-POLAR OR THE ANTIPOLARITY NITRIDE LAYER OF THE HIGH QUALITY, AND THE NITRIDE TYPE SEMICONDUCTOR DEVICE USING THAT AND A METHOD OF MANUFACTURE THEREOF

摘要

PURPOSE: The nitride type semiconductor device using the different substrate, and that and a method of manufacture thereof are that non-polar or the antipolarity side nitride layer the crystal growth mode is controlled is formed in non-polar or the antipolarity side of the Base substrate.;CONSTITUTION: The base substrate(11) having one among non-polar or the antipolarity side is prepared. The nitride system crystal growth nucleus layer(12) is formed in the side of the Base substrate. The first buffer layer(13) is grown up on the crystal growth nucleus layer. The lateral growth layer(14) is grown up on the first buffer layer.;COPYRIGHT KIPO 2011