Organic Thin Film TransistorOTFT comprising dual gate insulating layer and method for manufacturing thereof

摘要

PURPOSE: An organic thin film transistor having a dual gate insulation film and a manufacturing method thereof are provided to prevent disconnection of a gate electrode because the film and the method thereof includes the dual gate insulation film. CONSTITUTION: A PVP(Poly Vinyl Phenol) is manufactured as a liquefied PVP solution(S61). A PVP solution is defoamed(S63). The defoamed PVP solution is spread to cover a gate electrode. The first gate insulating layer is formed by spreading of the defoamed PVP solution(S65). A defoamed PVP solution is spread on the first gate insulating layer. The second gate insulating layer is formed by spreading of the defoamed PVP solution(S67).