首页> 外国专利> TARGET AND A MANUFACTURING METHOD THEREOF, AND A MEMORY AND A MANUFACTURING METHOD THEREOF, ENABLING A TARGET WITH LOW IGNITING RISK TO BE MANUFACTURED

TARGET AND A MANUFACTURING METHOD THEREOF, AND A MEMORY AND A MANUFACTURING METHOD THEREOF, ENABLING A TARGET WITH LOW IGNITING RISK TO BE MANUFACTURED

机译:目标及其制造方法,及其存储器和制造方法,使得具有低点燃风险的目标得以制造

摘要

PURPOSE: A target and a manufacturing method thereof, and a memory and a manufacturing method thereof are provided to enable a layer, including a high-melting point of metal element and chalcogens element and other metal elements, to be formed by sputtering using one target.;CONSTITUTION: A target consists of one or more metal elements with a high-melting point, which are selected from Ti, Zr, Hf, V, Nb, Ta, Lanthanoids, one or more elements, which are selected from Al, Ge, Zn, Co, Cu, Ni, Fe, Si, Mg, Ga, and one or more chalcogens elements, which are selected from S, Se, Te.;COPYRIGHT KIPO 2011
机译:目的:提供一种靶材及其制造方法,以及存储器及其制造方法,以使得能够使用一个靶材通过溅射来形成包括金属元素和硫族元素和其他金属元素的高熔点的层。组成:目标由一种或多种高熔点金属元素组成,这些元素选自Ti,Zr,Hf,V,Nb,Ta,镧系元素,一种或多种元素选自Al,Ge ,Zn,Co,Cu,Ni,Fe,Si,Mg,Ga和一种或多种硫族元素,它们选自S,Se,Te。; COPYRIGHT KIPO 2011

著录项

  • 公开/公告号KR20110011545A

    专利类型

  • 公开/公告日2011-02-08

    原文格式PDF

  • 申请/专利权人 SONY CORPORATION;

    申请/专利号KR20100068403

  • 申请日2010-07-15

  • 分类号C23C14/34;H01L21/8247;H01L21/203;

  • 国家 KR

  • 入库时间 2022-08-21 17:52:37

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