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TARGET AND A MANUFACTURING METHOD THEREOF, AND A MEMORY AND A MANUFACTURING METHOD THEREOF, ENABLING A TARGET WITH LOW IGNITING RISK TO BE MANUFACTURED
TARGET AND A MANUFACTURING METHOD THEREOF, AND A MEMORY AND A MANUFACTURING METHOD THEREOF, ENABLING A TARGET WITH LOW IGNITING RISK TO BE MANUFACTURED
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机译:目标及其制造方法,及其存储器和制造方法,使得具有低点燃风险的目标得以制造
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摘要
PURPOSE: A target and a manufacturing method thereof, and a memory and a manufacturing method thereof are provided to enable a layer, including a high-melting point of metal element and chalcogens element and other metal elements, to be formed by sputtering using one target.;CONSTITUTION: A target consists of one or more metal elements with a high-melting point, which are selected from Ti, Zr, Hf, V, Nb, Ta, Lanthanoids, one or more elements, which are selected from Al, Ge, Zn, Co, Cu, Ni, Fe, Si, Mg, Ga, and one or more chalcogens elements, which are selected from S, Se, Te.;COPYRIGHT KIPO 2011
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