MANUFACTURING METHOD OF THE GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE IMPROVING THE EXTERNAL QUANTUM EFFICIENCY

摘要

PURPOSE: The manufacturing method of the group III nitride semiconductor light emitting diode at the same time forms the metal oxide layer which is necessary for the Surface lattice formation in the transparent electrode layer formation.;CONSTITUTION: The nitride semiconductor layer(32) having the first conductivity comprises the domain for the cut of the emitting device. A plurality of nitride semiconductor layers(33) is allowed in between the nitride semiconductor layer(34) having nitride semiconductor layer and second conductivity having first conductivity.;COPYRIGHT KIPO 2011