首页> 外国专利> MgO EVAPORATION SOURCE FOR PROTECTING PDP PROTECTING FILM AND A MANUFACTURING METHOD OF MgO SINTERED USING THE SAME

MgO EVAPORATION SOURCE FOR PROTECTING PDP PROTECTING FILM AND A MANUFACTURING METHOD OF MgO SINTERED USING THE SAME

机译:用于保护PDP保护膜的MgO蒸发源和使用该MgO烧结膜的制造方法

摘要

PURPOSE: An MgO evaporation source for protecting PDP protecting film and a manufacturing method of MgO sintered using the same are provided to improve the durability and property of PDP by using poly-crystal magnesium oxide as a vapor-deposition material for a PDP protective film.;CONSTITUTION: Material more than two kinds of scandium, gadolinium, zirconium and iron is selected and mixed with magnesium oxide. The mixture is calcinated with pellet shaped after molded. The calcined material is sintered in 1600-1700°C. The relative density of the sintering material is 95.5% or greater. The complex dopant is mixed at 1-200 ppm. Calcination is performed in 500-1000°C. Sintering is operated for 1-10 hours.;COPYRIGHT KIPO 2011
机译:目的:提供一种用于保护PDP保护膜的MgO蒸发源和使用其进行烧结的MgO的制造方法,以通过使用多晶氧化镁作为PDP保护膜的气相沉积材料来提高PDP的耐久性和性能。 ;组成:选择Material 、,、锆和铁两种以上的材料并与氧化镁混合。模制后将混合物煅烧成颗粒状。煅烧的材料在1600-1700℃下烧结。烧结材料的相对密度为95.5%以上。将复合掺杂剂以1-200 ppm的比例混合。煅烧在500-100℃下进行。烧结操作1-10个小时。; COPYRIGHT KIPO 2011

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