METHOD FOR MANUFACTURING A P TYPE SEMICONDUCTOR OF A LIGHT EMITTING DEVICE, CAPABLE OF IMPROVING LUMINOUS PROPERTY BY FORMING AN OPTICAL CRYSTAL STRUCTURE IN A P TYPE SEMICONDUCTOR LAYER

摘要

PURPOSE: A method for manufacturing a P type semiconductor of a light emitting device is provided to manufacture the light emitting device without etching damage by using a selective re-growing method instead of an etching method when an optical crystal structure is formed on a p type semiconductor layer.;CONSTITUTION: A light emitting device includes a buffer layer(20), an n type semiconductor layer(30), an active layer(40), and a p type semiconductor layer(50). A nano mask with an optical crystal structure(55) is formed on the upper side of the p type semiconductor layer. The p type semiconductor layer of the light emitting device with the nano mask is selectively re-grown. The remaining nano mask is removed with BOE(Buffered Oxide Etchant).;COPYRIGHT KIPO 2011