FIELD EFFECT TRANSISTOR HAVING AG DOPED ZNO NANOWIRE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A field effect transistor including an Ag doped ZnO nano wire and a manufacturing method thereof are provided to obtain high electric property by controlling the doping and composition of a nano wire. CONSTITUTION: A gate insulation layer(12) is formed on a substrate(11). A source electrode(14) and a drain electrode(15) are positioned on the gate insulation layer. The source electrode and the drain electrode include a first layer made of titanium and a second layer made of conductive materials. A nano wire(13) is positioned between the source electrode and the drain electrode. The nano wire includes Ag doped ZnO.