首页> 外国专利> SPUTTERING SYSTEM HAVING A VERTICAL TARGET AND AN OBLIQUE TARGET ON A SIDE, CAPABLE OF OFFERING CONVENIENCE OF A TARGET CHANGE BY INDEPENDENTLY DEPOSITING AND CHANGING A TARGET

SPUTTERING SYSTEM HAVING A VERTICAL TARGET AND AN OBLIQUE TARGET ON A SIDE, CAPABLE OF OFFERING CONVENIENCE OF A TARGET CHANGE BY INDEPENDENTLY DEPOSITING AND CHANGING A TARGET

机译:在一侧具有垂直目标和倾斜目标的溅射系统,能够通过独立沉积和更改目标来提供目标更改的便利性

摘要

PURPOSE: A sputtering system having a vertical target and an oblique target on a side is provided to enhance a sputtering yield and a sputtering rate since first and second magnets capture secondary electron around first and second deposition sources.;CONSTITUTION: A sputtering system(1) comprises a vacuum chamber(10) and first and second sputtering deposition sources(104,106). The carrier of the vacuum chamber supports workpiece. A target comprises a second flat surface and a second general surface. The second general surface is formed at a right angle to a first flat surface. The first sputtering deposition source deposits a layer on the first flat surface. A plurality of second targets of the second sputtering deposition source are assembled to form a round-corner rectangular loop surrounding the first sputtering deposition source.;COPYRIGHT KIPO 2011
机译:目的:提供一种溅射系统,该系统在侧面具有垂直靶和倾斜靶,以提高溅射产率和溅射速率,因为第一和第二磁体在第一和第二沉积源周围捕获了二次电子。 )包括真空室(10)以及第一和第二溅射沉积源(104,106)。真空室的支架支撑工件。靶包括第二平坦表面和第二一般表面。第二总体表面形成为与第一平坦表面成直角。第一溅射沉积源在第一平坦表面上沉积层。组装第二溅射沉积源的多个第二靶,以形成围绕第一溅射沉积源的圆角矩形环。; COPYRIGHT KIPO 2011

著录项

  • 公开/公告号KR20110042017A

    专利类型

  • 公开/公告日2011-04-22

    原文格式PDF

  • 申请/专利权人 SUNTEK PRECISION CORP.;

    申请/专利号KR20100100837

  • 发明设计人 FU WEI YEN;CHENG CHAO HSI;

    申请日2010-10-15

  • 分类号C23C14/34;C23C14/04;C23C14/56;

  • 国家 KR

  • 入库时间 2022-08-21 17:52:08

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